Chinese and US scientists develop world’s first graphene semiconductor, a feat that could transform computer chips

This long-elusive feat may now be closer to reality, according to nanoscientists at China’s Tianjin University and the Georgia Institute of Technology, whose work was published Wednesday in the journal Nature.

Chinese state media hailed the feat as a significant step forward for the use of graphene in chip manufacturing.

“This research not only preserved graphene’s remarkable stability, but also introduced new electronic properties and paved the way for graphene-based chips,” Beijing-based Science and Technology Daily said in a report on Friday. Ta.

The research was led by Professor Ma Lei from Tianjin University and Professor Walt de Heer from Georgia Tech. Both have focused on graphene electronics and other two-dimensional materials since establishing the Tianjin International Center for Nanoparticles and Nanosystems at Tianjin University in 2018.

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Known as the first stable two-dimensional material at room temperature, graphene’s unique electronic structure also means that it has a zero “band gap.” This means that there is no energy difference when electrons in a semiconductor jump between low and high energy bands. The lack of this natural gap hinders graphene’s semiconducting functionality, making it unsuitable for electronic devices.

Overcoming this challenge without losing graphene’s unique properties is an important step toward practical application in the electronics field, Ma told China Business Network.

“The reason our research is valued is because it will allow us to make graphene electronics truly practical in the future and remove the biggest obstacles.”

The new method creates a special layer on top of graphene that creates the necessary gaps for electrons, allowing them to move much faster than in silicon and similar materials.

This is a major step forward for using graphene in electronic devices, giving it the right properties to function well as a semiconductor.

To achieve this breakthrough, Ma and his team used a method called quasi-equilibrium annealing, in which the material is carefully heated and cooled to change its structure.

The process begins by heating a silicon carbide substrate in a furnace and holding it at various temperatures for a specific amount of time. This creates a smooth, flat surface that is ideal for adding a layer known as “epigraphene.”

This layer is very important because it introduces the necessary electronic gap, making graphene suitable for electronic devices.

It also ensures that graphene is durable and easy to process, promising widespread commercial applications in electronic devices.

Instant charging is on the horizon with China’s graphene development

“It will not only open new avenues for high-performance electronic devices beyond traditional silicon-based technologies, but also inject new energy into the semiconductor industry,” the report, posted on Tianjin University’s website, said. It is stated that.

“The advent of graphene semiconductors is timely and heralds a fundamental transformation in electronics. This innovation will meet the growing demand for higher computing speeds and miniaturized integrated electronic devices. .”

Regarding the practical application of graphene semiconductors, Ma said the material is cost-competitive and has the potential to offer superior performance compared to semiconductor materials currently on the market.

But the journey is likely to be a long one. Ma estimated that it may take another 10 to 15 years for industrial implementation of graphene semiconductors to be fully realized.